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    NTST30U100CT, NTSB30U100CT?1, NTSJ30U100CTG, NTSB30U100CTG http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V V RRM RWM VR 100 V Average Rectified Forward Current (Rated VR, TC = 125 °C) Per device Per diode IF(AV) 30 15 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 120 °C) Per device Per diode IFRM 60 30 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 160 A Operating Junction Temperature TJ ?40 to +150 °C Storage Temperature Tstg ?40 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Rating Symbol NTST30U100CTG, NTSB30U100CT?1G NTSB30U100CTG NTSJ30U100CTG Unit Maximum Thermal Resistance per Diode Junction?to?Case Junction?to?Ambient RJC RJA 2.5 70 0.93 46.5 3.81 105 °C/W °C/W ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Typ Max Unit Maximum Instantaneous Forward Voltage (Note 1) (IF = 5 A, T J = 25 °C) (IF = 7.5 A, T J = 25 °C) (IF = 15 A, T J = 25 °C) (IF = 5 A, T J = 125 °C) (IF = 7.5 A, T J = 125 °C) (IF = 15 A, T J = 125 °C) vF 0.47 0.52 0.66 0.42 0.48 0.60 ? ? 0.80 ? ? 0.65 V Maximum Instantaneous Reverse Current (Note 1) (VR = 70 V, T J = 25 °C) (VR = 70 V, T J = 125 °C) (Rated dc Voltage, TJ = 25 °C) (Rated dc Voltage, TJ = 125 °C) IR 15 12 65 32 675 60 A mA A mA 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% |